features x built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit) x the bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. they also have the advantage of almost comp letely eliminating parasitic effects x only the on/off conditions need to be set for operation, making device design easy absolute maximum ratings parameter symbol value unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current-continuous i c 100 ma collector dissipation p c 200 mw junction temperature t j 150 : storage temperature range t stg -55~150 : electrical characteristics sym parameter min typ max unit v (br)cbo collector-base breakdown voltage (i c =50ua, i e =0) 50 --- --- v v (br)ceo collector-emitter breakdown voltage (i c =1ma, i b =0) 50 --- --- v v (br)ebo emitter-base breakdown voltage (i e =50ua, i c =0) 5 --- --- v i cbo collector cut-off current (v cb =50v, i e =0) --- --- 0.5 ua i ebo emitter cut-off current (v eb =4v, i c =0) h fe dc current gain (v ce =5v, i c =1ma) 100 300 600 --- v ce(sat) collector-emitter saturation voltage (i c =10ma, i b =1ma) --- --- 0.3 v r 1 input resistor 7 10 13 k ? f t transition frequency (v ce =10v, i e =-5ma, f=100mhz) --- 250 --- mhz .079 2.000 in ch es mm . 031 .800 .035 .900 . 037 .950 .037 .950 --- --- 0.5 ua sot-23 suggested solder pad layout *marking: 04 epoxy meets ul 94 v-0 flammability rating moisure sensitivity level 1 2012- 0 willas electronic corp. npn digital transistor DTC114TCA dimensions in inches and (millimeters) .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)min. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)max. .122(3.10) .106(2.70) .063(1.60) .047(1.20)
2012- 0 willas electronic corp. npn digital transistor DTC114TCA
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